IRLML6401TRPBF
The IRLML6401TRPBF is a single P-channel MOSFET manufactured by Infineon Technologies. It features a drain-source voltage (Vdss) of 12 V and a gate-source voltage (Vgs) maximum of ±8 V. The drive voltage for maximum and minimum Rds On is 1.8 V and 4.5 V, respectively. It has an input capacitance (Ciss) of 830 picoFarads at a Vds of 10 V. This MOSFET is suitable for various low-voltage switching applications and comes in a compact package, making it ideal for space-constrained designs.
Description
- The IRLML6401TRPBF is a P-Channel MOSFET manufactured by Infineon Technologies and belongs to the HEXFET® series. It offers ultra-low on-resistance for high efficiency in power management applications. With a low profile of less than 1.1mm, it fits well in compact designs. The MOSFET can handle a drain-source voltage (Vdss) of 12V and a continuous drain current (Id) of 4.3A at 25°C. It operates with gate drive voltages starting at 1.8V, ensuring fast switching. The device comes in a surface-mount SOT-23 package, making it easy to use in various electronic circuits.
Key Features
Ultra Low On-Resistance:
The IRLML6401TRPBF boasts an on-resistance (RDS(ON)) of only 50 milliohms at a drain current of 4.3A and a gate voltage of 4.5V, ensuring minimal power loss during operation.
Low Profile:
With a height of less than 1.1mm, this MOSFET is ideal for applications requiring compact and low-profile components.
Fast Switching:
It offers fast switching capabilities, which are essential for high-efficiency power management applications.
1.8V Gate Rated:
The device can be driven with a gate voltage as low as 1.8V, making it versatile for various low voltage applications.
Electrical Highlights
- The IRLML6401TRPBF has robust electrical characteristics. It can withstand a continuous drain current (Id) of 4.3A at 25°C and a drain-source voltage (Vdss) of 12V. At 4.3A and 4.5V, it has a low on-resistance (RDS(ON)) of 50 milliohms. At 250µA, the gate threshold voltage, or Vgs(th), is 950mV. Its input capacitance (Ciss) is 830 picoFarads at 10V, and its gate charge (Qg) is 15 nanoCoulombs at 5V. It functions between -55°C and 150°C, supports a gate-source voltage (Vgs) range of ±8V, and at 25°C, it can dissipate up to 1.3W of electricity.
Package and Dimensions
- The IRLML6401TRPBF comes in a surface-mount package, specifically the Micro3™/SOT-23. Compact TO-236-3, SC-59, SOT-23-3 casing is one of its features. The package is 1.12 mm tall, 3.0226 mm long, and 1.397 mm wide. These are its measurements. It is appropriate for applications where space is limited because of its tiny footprint. A 3000 piece standard pack amount ensures there is an adequate supply to meet production demands.
Terms of payment
- We're glad to accept bank transfers, typically processed in 1-2 days.
- When items are in stock, we kindly request full payment for immediate shipping. However, if products need to be ordered and have a lead time, a 30% down payment is required, with the remaining 70% due before the shipping process starts.Thank you for your interest and consideration.
Return policy
We accept replacements or returns under these conditions:
- 1).Deficiency in quantity, wrong items, or external defects (breakage, rust) acknowledged by us.
- 2).Notification of the defect within 90 days post delivery.
- 3).Unused product in original, unopened packaging.
FAQ
Q: What type of MOSFET is the IRLML6401TRPBF?
Q: What is this model's maximum Drain-Source Voltage (Vdss)?
Q: What is the highest continuous drain current (Id) for this MOSFET?
Q: Which characteristics make up the IRLML6401TRPBF MOSFET?
Q: What uses is this model appropriate for?
Q: What impact does the gate drive voltage have on the IRLML6401TRPBF's performance?
Q: What are the IRLML6401TRPBF's thermal properties?
Q: What is the product's operating temperature range?
Q: What shipping options are available?
Q: What shipping options are available for my order?
Q: Is there a possibility of providing customized electronic component solutions?
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