DMG3420U-7
The DMG3420U-7 is a single N-channel MOSFET manufactured by Diodes Incorporated, falling under the subcategory of MOSFETs. It comes in a SOT-23-3 package and features a drain-source breakdown voltage of 20 V. The gate-source voltage is rated at -12 V to +12 V. This MOSFET is part of the DMG3420 series and is designed for low-power switching applications where compact packaging and efficient performance are critical.
Description
- The DMG3420U-7 is an N-channel MOSFET developed by Diodes Incorporated. It is designed for surface mount applications and is ideal for various low voltage and high-efficiency power management applications. Here are some key features and specifications of the DMG3420U-7:
Key Features
- High Drain Current Capability:
The DMG3420U-7 can handle a continuous drain current of up to 5.47A at 25°C, making it suitable for high current applications.
- Low On-Resistance:
- This MOSFET exhibits a very low on-resistance of 29mOhm when the gate-source voltage (Vgs) is 10V and the drain current (Id) is 6A. This low Rds(on) minimizes power losses and improves efficiency.
- Low Gate Threshold Voltage:
- It features a low gate threshold voltage (Vgs(th)) of 1.2V at a drain current of 250µA, which allows for easy turn-on and compatibility with low voltage drive circuits.
- Fast Switching Speed:
- With a gate charge (Qg) of only 5.4 nC at a Vgs of 4.5V, the DMG3420U-7 is capable of fast switching, making it ideal for applications requiring quick response times.
- Robust Power Dissipation:
- It can dissipate a maximum power of 740mW in a standard ambient temperature (Ta), ensuring reliable operation in various thermal conditions.
Applications
-
The DMG3420U-7 is a versatile N-channel MOSFET suitable for a wide range of applications, including:
General Purpose Interfacing Switch:
Used in circuits as an interfacing switch to control various loads and signals efficiently.
Power Management Functions:
Ideal for managing power in systems by switching power to different components, ensuring efficient energy use.
Portable Devices:
Utilized in battery-operated devices to enhance power efficiency and prolong battery life due to its low on-resistance and high current capability.
Load Switching:
Employed in circuits to switch on and off different loads, ensuring minimal power loss and quick response.
Low Voltage DC-DC Converters:
Used in DC-DC converter circuits to step up or step down voltages efficiently with minimal power dissipation.
Battery-Powered Circuits:
Suitable for applications in battery-powered systems where efficient power management is crucial to extend battery life.
Product parameter information
| Type | Specification |
|
Category |
Single FETs, MOSFETs |
|
Subcategory |
MOSFETs |
|
Manufacturer |
Diodes Incorporated |
|
Transistor Type |
1 N-Channel |
|
Technology |
Si |
|
Mounting Style |
SMD/SMT |
|
Package / Case |
SOT-23-3 |
|
Transistor Polarity |
N-Channel |
|
Number of Channels |
1 Channel |
|
Drain-Source Breakdown Voltage (Vds) |
20 V |
|
Continuous Drain Current (Id) |
5.47 A |
|
Drain-Source Resistance (Rds On) |
29 mOhms |
|
Gate-Source Voltage (Vgs) |
-12 V, +12 V |
|
Gate-Source Threshold Voltage (Vgs th) |
500 mV |
|
Gate Charge (Qg) |
5.4 nC |
|
Typical Turn-On Delay Time |
6.5 ns |
|
Typical Turn-Off Delay Time |
21.6 ns |
|
Fall Time |
5.3 ns |
|
Power Dissipation (Pd) |
740 mW |
|
Channel Mode |
Enhancement |
|
Series |
DMG3420 |
|
Configuration |
Single |
|
Operating Temperature Range |
-55°C ~ +150°C |
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FAQ
Q: What is the DMG3420U-7's drain-source breakdown voltage (Vds)?
Q: What is the DMG3420U-7's maximum continuous drain current (Id)?
Q: What is the Rds(on) value for the DMG3420U-7?
Q: What are the maximum gate-source voltages (Vgs) for the DMG3420U-7?
Q: What is the typical gate-source threshold voltage for the DMG3420U-7?
Q: What kind of package does the DMG3420U-7 come in?
Q: What is the DMG3420U-7's working temperature range?
Q: Is there a possibility of providing customized electronic component solutions?
Q: Does XRS have enough DMG3420U-7 in stock?
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