DMP3099L-7
The DMP3099L-7 is a MOSFET transistor from Diodes Incorporated. Its maximum input capacitance (Ciss) is 563 pF at 25 V, and its drain-to-source voltage (Vdss) is 30 V. The gadget functions in the temperature range of -55°C to 150°C and may dissipate up to 1.08W (Ta). Because it comes in a SOT-23-3 packaging, surface-mount applications can use it.
Description
Features and Benefits
- Diodes Incorporated invented the DMP3099L-7, a P-Channel MOSFET with low input capacitance, quick switching speed, low input/output leakage, and low gate threshold voltage. With its combination of superior switching performance and reduced on-state resistance (RDS(on)), these attributes make it the perfect choice for high-efficiency power management applications.
- Efficient Power Management:

- The DMP3099L-7 features a low gate threshold voltage of 2.1V, ensuring it operates effectively even at low voltages, making it ideal for energy-efficient applications.
- High-Speed Performance:
- Suitable for high-speed applications, this MOSFET lowers latency and enhances the operation of your electrical circuits. It has a low input capacitance of 563 pF and can flip quickly.
- Reliable Operation:
- This MOSFET's excellent performance and dependability, together with its low input/output leakage design, guarantee that your power management applications operate efficiently and with little power loss.
- Outstanding Control:

- This MOSFET offers precise voltage and current control with a fixed gain of 8.2 V/V. This is particularly useful for DC-DC converters, backlighting, and power control applications.
- Robust Design:
- It can handle a maximum continuous drain current of 3.8A and a maximum power dissipation of 1.08W, making it suitable for demanding applications with high current requirements.
- Wide Operating Range:
- With operating temperatures spanning from -55°C to 150°C, this model exhibits versatility and dependability in a wide range of climatic circumstances.
Product Dimensions and Packaging
- The DMP3099L-7 is a compact, surface-mount MOSFET designed for space-constrained applications. It has the compact and effective SOT-23-3 package, which is ideal for high-density electronic circuits. The following are the packaging dimensions:
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Height: 1.1 mm
Length: 3 mm
Width: 1.4 mm


- This MOSFET comes in the TO-236-3, SC-59, and SOT-23-3 package/case options, providing versatility for various mounting and layout requirements. The device has three pins and a silicon build, which contribute to its long-term and consistent reliability. The weight of each unit is roughly 7.994566 mg, and since this model has a particularly light appearance, it can be used for compact and lightweight designs.
Our Market
- In the field of electronic components, our market is constantly expanding globally. We collaborate with clients from the United States, the United Kingdom, Russia, Germany, Spain, South Korea, Japan, and many other countries to create success together. Our products are sold in the international market, and with the support of global shipping, more and more customers from different regions have established long-term cooperative relationships with us. As our business scope expands, we are committed to providing innovative solutions and excellent services to global partners, ensuring that our electronic components meet the diverse needs of the constantly evolving global market.
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FAQ
Q: What is the DMP3099L-7's maximum drain-to-source voltage (Vdss)?
Q: What is the DMP3099L-7's continuous drain current (Id) at 25°C?
Q: What driving voltage is needed to get the highest and lowest Rds On?
Q: What is this product's gate threshold voltage (Vgs(th))?
Q: What is the DMP3099L-7's maximum gate charge (Qg)?
Q: What is the DMP3099L-7's maximum power dissipation?
Q: What is the DMP3099's working temperature range?
Q: What types of electronic components does XRS offer?
Q: How is the quality of the products ensured?
Q: Does XRS have enough DMP3099 in stock?
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