2N7002-7-F
The 2N7002-7-F is a single N-channel MOSFET manufactured by Diodes Incorporated. It has a maximum Rds(On) of 7.5 Ohms at an Id of 50mA and a Vgs of 5V. The threshold voltage (Vgs(th)) is a maximum of 2.5V at an Id of 250 µA. The MOSFET can handle a maximum gate-source voltage (Vgs) of ±20V and has an input capacitance (Ciss) of 50 pF at Vds of 25V. This makes it suitable for various switching and amplification applications.
Description
Feature
- The 2N7002-7-F MOSFET is a versatile N-Channel device with several key features that make it suitable for various applications:
- Low On-Resistance:
This product has a low on resistance of 7.5 ohms when driven by 5V, allowing it to effectively conduct current with minimal power loss. This characteristic is particularly advantageous for applications that require high efficiency and low heat generation.
- Low Gate Threshold Voltage:
- With a maximum gate threshold voltage of 2.5V at a drain current of 250 µA, this MOSFET can be easily driven by low voltage signals, making it ideal for interfacing with low voltage control circuits.
- Low Input Capacitance:
- The device has a maximum input capacitance of 50 pF at a drain-source voltage of 25V, which allows for fast switching speeds and efficient operation in high-frequency applications.
- High Drain-Source Voltage:
- It can handle a maximum drain-source voltage of 60V, making it suitable for applications requiring high voltage tolerance.
- High Continuous Drain Current:
- It can conduct a continuous drain current of up to 115mA at 25°C, allowing it to handle moderate power loads effectively.
Maximum Ratings
- The 2N7002-7-F is an N-channel MOSFET by Diodes Incorporated, with the following key maximum ratings:
Drain-Source Voltage (V DSS): 60V. This is the highest voltage the MOSFET can handle between the drain and source terminals.
Drain-Gate Voltage (V DGR): 60V with R GS < 1.0MΩ. This ensures stability under high voltage between the drain and gate.
Pulsed Drain Current (I DM): 800mA (10μs pulse, 1% duty cycle). This indicates the peak current the MOSFET can handle in short bursts.
Continuous Drain Current (I D) @ 25°C: 115mA. This is the steady current the MOSFET can handle at room temperature.
Package Outline Dimensions
- The 2N7002-7-F is housed in a compact SOT-23-3 package, also known as TO-236-3 or SC-59. It adopts a surface mounted packaging method, and from a microscopic perspective, its specific dimensions are 1mm high, 2.9mm long, and 1.3mm wide. Meanwhile, the product is made of molded plastic and "green" molding compounds, ensuring an environmentally friendly design. This device has a double terminal position in the shape of seagull wings, making it easy to install on the surface. Additionally, it is available in Tape & Reel (TR) and Cut Tape (CT) packaging options, suitable for automated assembly processes. The total weight of the package is approximately 7.994566mg.
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FAQ
Q: What is the 2N7002-7-F?
Q: What is this product's maximum rating as of right now?
Q: Which uses does this model typically have?
Q: What is this model's input capacitance (Ciss)?
Q: Does the 2N7002-7-F comply with RoHS?
Q: How much voltage can the 2N7002-7-F withstand at its maximum?
Q: How can I find out if a product is available and place an order?
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