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BSN20BKR
BSN20BKR
BSN20BKR

N-channel Trench MOSFET BSN20BKR

The N-Channel MOSFET Nexperia BSN20BKR has a gate threshold voltage of 1.4V at 250 µA and a maximum drive voltage of 10V. Its highest gate charge at 4.5V is 0.49 nC, and it can dissipate up to 310 mW of electricity. Applications requiring efficient switching are intended for this MOSFET.

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Description

Product parameter

Type	Parameter
Category	Transistors, Single FETs, MOSFETs
Manufacturer	Nexperia
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vds)	60 V
Current - Continuous Drain (Id)	265 mA @ 25°C (Ta)
Drive Voltage (Max Rds On)	10 V
Rds On (Max) @ Id, Vgs	2.8 Ω @ 200 mA, 10 V
Vgs(th) (Max) @ Id	1.4 V @ 250 µA
Gate Charge (Qg) (Max) @ Vgs	0.49 nC @ 4.5 V
Vgs (Max)	±20 V
Input Capacitance (Ciss) (Max)	20.2 pF @ 30 V
Power Dissipation (Max)	310 mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-236AB
Package / Case	TO-236-3, SC-59, SOT-23-3
Base Product Number	BSN20

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Key Features

Logic-Level Compatible:

The BSN20BKR is designed to be compatible with logic-level signals, allowing it to interface easily with digital circuits and systems operating at low voltages.

Fast-Switching:

Utilizing trench MOSFET technology, the BSN20BKR achieves very fast switching speeds, making it suitable for applications requiring rapid on-off transitions.

Trench MOSFET Technology:

The device employs advanced trench MOSFET technology, which enhances performance by reducing on-resistance and improving efficiency.

Electrostatic Discharge (ESD) Protection:

It includes robust ESD protection rated at 2 kV HBM, safeguarding the device from damage due to static electricity and enhancing its reliability in sensitive applications.

package information

The BSN20BKR is housed in a TO-236AB package, also known as TO-236-3, SC-59, or SOT-23-3. This surface-mount package has three pins that it can hold. By using silicon for the transistor element's construction, dependable and effective performance is guaranteed. Due to its compact size, this package may be easily integrated into a wide range of circuit designs and fits into locations that are limited in size.

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FAQ

Q: What is the BSN20BKR's maximum drain-to-source voltage (Vds)?

A: The BSN20BKR has a maximum drain-to-source voltage (Vds) of 60 V. The maximum voltage that can be applied between the drain and source terminals without causing damage to the MOSFET is indicated by this rating.

Q: What is the continuous drain current (Id) capability of the BSN20BKR?

A: It can withstand an ambient temperature of 25°C and a continuous drain current (Id) of up to 265 mA. The maximum continuous current that the MOSFET can withstand without overheating is indicated by this current rating.

Q: What is the BSN20BKR's maximum on-resistance (Rds On)?

A: With a gate-source voltage (Vgs) of 10 V and a drain current (200 mA), the maximum on-resistance (Rds On) for this type is 2.8 Ω. By regulating the amount of voltage dropped across the MOSFET when it is in the on-state, this resistance has an impact on the MOSFET's efficiency.

Q: What is the BSN20BKR's gate threshold voltage?

A: For this model, the maximum gate threshold voltage with a drain current of 250 µA is 1.4 V. This voltage must exist between the source and gate in order for a tiny drain current to begin flowing.

Q: What is the BSN20BKR's maximum gate charge (Qg)?

A: For this model, the maximum gate charge (Qg) at a gate-source voltage (Vgs) of 4.5 V is 0.49 nC (nanocoulombs). Gate charge, which influences switching speed and power dissipation, is a measurement of the amount of charge required to turn a MOSFET on and off.

Q: How much energy may be dissipated by the BSN20BKR?

A: It has a maximum power dissipation of 310 mW (milliwatts). This is the highest power that the MOSFET can manage without going over its thermal threshold.

Q: What is the BSN20BKR's level of electrostatic discharge (ESD) protection?

A: Using the Human Body Model (HBM), it is shielded against electrostatic discharge (ESD) up to 2 kV (kilovolts). This protection aids in preventing static electricity-related damage to the MOSFET.

Q: Which characteristics make up the BSN20BKR?

A: It has trench MOSFET technology, exceptionally quick switching capability, and logic-level compatibility. It also provides up to 2 kV of ESD protection. It is appropriate for high-speed switching applications and dependable operation in electronic circuits because to these qualities.

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