Onsemi IGBT FGH75T65SHD
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Onsemi IGBT FGH75T65SHD

Onsemi IGBT FGH75T65SHD

The FGH75T65SHD(FGH75T65SHD-F155)is a single IGBT manufactured by onsemi. It belongs to the Single IGBTs group and is made for high-power applications. Large electrical loads may be handled by this device since it can accommodate a maximum collector current (Ic) of 150 A and a collector pulsed current (Icm) of 225 A. Under particular test settings (400V, 75A, 3Ω, 15V), its maximum power dissipation is 455 W. The device can switch quickly, as evidenced by its reverse recovery time (trr) of 43.4 ns.

Description

Feature
  •  Advanced Field Stop Technology:Feature_FGH75T65SHD
  • A novel field resistance technology is adopted by ON Semiconductor's FGH75T65SHD, a major breakthrough in IGBT design. Numerous applications, including solar inverters, UPS systems, welding machines, telecommunications equipment, ESS, and PFC units, have performed better as a result of this innovation. By reducing conduction and switching losses, it guarantees optimal performance, which is essential for power electronic devices that are efficient.
  •  High Power Handling Capability:
  • This product has a maximum collector-emitter breakdown voltage of 650V and a continuous collector current rating of up to 150A. This performs excellently in handling considerable power levels. It also supports pulse currents up to 225A, suitable for applications that require high current capacity and reliability under different load conditions.
  •  Low Saturation Voltage and Efficient Operation:
  • At 15V and 75A, this IGBT has a low saturation value of 2.1V. This function maximizes energy efficiency and reduces power consumption throughout the conduction process. Because of its positive temperature coefficient, which makes parallel operation easier, the system is more flexible and reliable in a variety of working environments.
  •   Fast Switching Performance:
  • Designed for rapid switching applications, it exhibits fast turn-on and turn-off characteristics. It offers a turn-on delay time of 28 and a turn-off delay time of 80 at 25°C, ensuring precise control over switching transitions and reducing switching losses in high-frequency operations.
package information
Package Information_FGH75T65SHD_1
Package Information_FGH75T65SHD_2
  • 1. Package Type: The TO-247-3 package for the FGH75T65 series is made to be mounted through holes on a circuit board. Power electronics frequently use this kind of packaging because it makes installation simple and placement secure.

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    2. Pin Configuration: It has three pins, which are used to connect the device to the circuit. Each pin is 20mm long, providing a stable and reliable connection to the board.
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    3. Weight: With an average weight of 6.39 grams for each part, this model is a reasonably light alternative for high-power applications.
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    4. Design Benefit: The TO-247-3 package is designed to handle high power levels and provide excellent heat dissipation. This makes the FGH75T65 series ideal for use in many applications
 
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Type Specification

Category

Single IGBTs

Manufacturer

onsemi

Packaging

Tube

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

650 V

Current - Collector (Ic) (Max)

150 A

Current - Collector Pulsed (Icm)

225 A

Maximum Vce(on) @ Vge, Ic

2.1 V @ 15V, 75A

Maximum Power Dissipation

455 W

Switching Energy

2.4 mJ (on), 720 µJ (off)

Input Type

Standard

Gate Charge

123 nC

Turn-on / Turn-off Delay Time @ 25°C

28 ns / 80 ns

Test Condition

400V, 75A, 3Ω, 15V

Reverse Recovery Time (trr)

43.4 ns

Operating Temperature Range

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247-3

Base Product Number

FGH75

FAQ

Q: What is the FGH75T65SHD's maximum collector-emitter voltage?

A: There is a maximum of 650 V for the collector-emitter breakdown voltage (V(BR)CES).

Q: What is this IGBT's highest rating for continuous collector current?

A: A maximum continuous collector current (Ic) of 150 A can be handled by it.

Q: For what kinds of applications is the FGH75T65SHD appropriate?

A: It works perfectly with solar inverters, energy storage systems (ESS), power factor correction (PFC) circuits, welding equipment, and uninterruptible power supplies (UPS).

Q: What is the FGH75T65SHD's usual saturation voltage?

A: At Vge = 15 V and Ic = 75 A, the usual saturation voltage (VCE(sat)) is 2.1 V.

Q: What are this IGBT's switching energy losses?

A: The switching energy losses are 2.4 mJ during turn-on and 720 µJ during turn-off.

Q: What is this model's maximum junction temperature?

A: This IGBT has a maximum junction temperature of 175°C.

Q: How fast is the turn-on and turn-off delay time?

A: The turn-on delay time is 28 ns, and the turn-off delay time is 80 ns at the test conditions of 400V, 75A, 3Ω, and 15V.

Q: Does XRS have enough FGH75T65SHD in stock?

A: Yes, XRS has a large stock of these products in order to guarantee that we can quickly fulfil our clients' requests. Our well-stocked inventory enables prompt order fulfilment and delivery, giving clients the guarantee that their products will be available when they need them.

Q: Is there a possibility of providing customized electronic component solutions?

A: Yes, we offer customized solutions to meet specific customer requirements. Please contact our sales team for more information.

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