Transistor Infineon IKW40N120H3
The IKW40N120H3(or IKW40N120H3FKSA1) is a single IGBT (Insulated Gate Bipolar Transistor) manufactured by Infineon Technologies, categorized under transistors.This IGBT features a trench field stop design, optimizing it for high efficiency and fast switching. It has a switching energy of 4.4 mJ and a gate charge of 185 nC. The device has a standard input type and is designed for through-hole mounting. It comes in a TO-247-3 package, making it suitable for various high-power applications.
Description
- Infineon Technologies produces the high-performance insulated gate bipolar transistor (IGBT) IKW40N120H3. This component is specifically designed for high-power and efficient applications, utilizing advanced trench field stopping technology. It is suitable for demanding industrial and automotive applications requiring reliable high-voltage operation, thanks to its maximum collector-emitter breakdown voltage (VCE) of 1200 V.
Features
Major Function:
- Powerful customizable capabilities are offered by this product to provide the best possible performance from high-power electronic equipment. First of all, it can support up to 40A of maximum collector current (IC) and 160A of pulse collector current. Its low saturation voltage of 2.4 V at 15V and 40A also guarantees little conduction loss and raises the system's overall efficiency. Furthermore, the apparatus is outfitted with a highly responsive and rapid recovery anti-parallel diode. It helps reduce switching losses and electromagnetic interference, further enhancing efficiency.
- Electrical and thermal efficiency:
- With a maximum junction temperature of 175 °C, this IGBT is made to withstand harsh conditions. This ensures reliable operation even in high-temperature environments. It is also capable of handling huge power loads due to its high 483W power consumption capacity. With a on delay time of 30 ns and an off delay time of 290 ns at 25 ° C, this model also has a rapid switching feature. Making it ideal for high-speed applications. At 185nC, its relatively low gate charge, which is advantageous for needs related to efficient gate drive.
- Compliance and Packaging:
- Its performance and dependability in crucial applications are guaranteed by its compliance with JEDEC target application guidelines. Additionally, the product is lead-free and electroplated without violation of RoHS regulations, making it eco-friendly. This device is ideal for high-power applications that need effective heat dissipation and is mounted in a through-hole TO-247-3 package. PG-TO247-3-1 is the supplier equipment package's designation, meaning that it is compatible with standard assembly procedures.
Application
The IKW40N120H3 is a great choice for high-power uses. In an uninterruptible power supply (UPS), it functions flawlessly. due to the fact that it can withstand high power and voltage with ease, guaranteeing dependable functioning during blackouts. Stable welding performance is ensured in welding converters by this IGBT's excellent current processing and low EMI. It is also very appropriate for converters with high switching frequencies because of its quick switching time and minimal energy loss. Overall, these characteristics make this product appropriate for use in severe situations with dependable and effective power management, such as industrial motor drivers, solar inverters, and automobile power electronic devices.
Product parameter information
| Type | Specification |
|
Category |
Transistors - Single IGBTs |
|
Manufacturer |
Infineon Technologies |
|
Series |
TrenchStop® |
|
Packaging |
Tube |
|
IGBT Type |
Trench Field Stop |
|
Collector-Emitter Breakdown Voltage (Max) |
1200 V |
|
Collector Current (Ic) (Max) |
80 A |
|
Collector Pulsed Current (Icm) |
160 A |
|
Maximum Vce(on) @ Vge, Ic |
2.4 V @ 15V, 40A |
|
Maximum Power Dissipation |
483 W |
|
Switching Energy |
4.4 mJ |
|
Input Type |
Standard |
|
Gate Charge |
185 nC |
|
Turn-on/Turn-off Delay Time @ 25°C |
30 ns / 290 ns |
|
Test Condition |
600V, 40A, 12Ohm, 15V |
|
Reverse Recovery Time (trr) |
355 ns |
|
Operating Temperature Range |
-40°C ~ 175°C (TJ) |
|
Mounting Type |
Through Hole |
|
Package / Case |
TO-247-3 |
|
Supplier Device Package |
PG-TO247-3-1 |
|
Base Product Number |
IKW40N120 |
About us
At HK XRS Technology Limited, we're proud to be a top supplier of electronic components. Our products include integrated circuits, LEDs, diodes, transistors, modules, capacitors, etc. Our goal is to focus on innovation and try to help customers win more on their business, leading to long-term cooperative relationships. We are committed to providing high-end products and professional services. Build a bridge for the birth of various electronic products and the realization of technological development. Contact us now if you have any needs!
FAQ
Q: What is the IKW40N120H3's maximum collector-emitter breakdown voltage?
Q: Which applications are common for the IKW40N120H3?
Q: What is the IKW40N120H3's maximum junction temperature?
Q: What is the IKW40N120H3's switching energy?
Q: What are the IKW40N120H3's turn-on and turn-off delay times?
Q: What kind of input is available to the IKW40N120H3?
Q: What types of electronic components does XRS offer?
Q: How is the quality of the products ensured?
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