FGH60N60SMD
Onsemi's FGH60N60SMD is a high-power IGBT that can manage power dissipation of up to 600 W. With a turn-on delay time of 18 ns and a turn-off delay time of 104 ns at 25°C, it offers quick switching. It attains a reverse recovery time (trr) of 39 ns under test circumstances of 400V, 60A, 3Ω, and 15V, making it appropriate for dependable and effective operation in demanding applications.
Description
Overview
- General Description:
- FGH60N60SMD is a high-performance insulated gate bipolar transistor (IGBT) produced by onsemi and belongs to the category of discrete semiconductor products. This product is designed specifically for a single IGBT configuration.
- Electrical specifications:
- Its maximum collector emitter breakdown voltage is 600 V, and it can handle a maximum collector current of 120 A and a peak pulse current of 180 A. This IGBT can operate with a maximum voltage drop of 2.5 V at a gate emitter voltage of 15 V and a collector current of 60 A. This performance ensures efficient power management.
- Switching characteristics:
- This device has a field resistance IGBT type, ensuring high-speed switching with a conduction delay time of 18 ns and a turn off delay time of 104 ns at 25 ° C. Secondly, it can consume up to 600 W of power. During operation, the switch energy is 1.26 mJ when turned on and approximately 450 µ J when turned off. Its gate charge is relatively low, at 189 nC, making it easy to control using standard input types.
- Physical and thermal performance:
- With its through-hole installation design in the TO-247-3 packaging, this model offers dependable mechanical stability and heat dissipation. It is appropriate for a number of demanding applications, such as elevator systems, inverters, and induction cookers, given its working temperature range of -55 °C to 175 °C. With its 39 nanosecond reverse recovery time, this IGBT is suitable for high-speed, effective switching applications.
Working principle
As an IGBT product, FGH60N60SMD can function by controlling the voltage applied to its gate. Simply put, when a positive voltage is applied to the gate, it generates conductive channels in N-channel MOSFETs. Simultaneously allowing the base current of the PNP transistor to flow and pass through the IGBT, thereby allowing current to pass through. On the contrary, when a negative voltage is applied, the conductive channel disappears, the base current is cut off, and the IGBT is turned off, thereby stopping the current flow. This mechanism enables this product to effectively switch high-power currents with minimal input control, making it highly suitable for applications such as inverters, induction cookers, and elevators.
Product parameter information
| Type | Specification |
|
Category |
Discrete Semiconductor Products |
|
Subcategory |
Transistors |
|
Type |
IGBTs |
|
Configuration |
Single IGBTs |
|
Manufacturer |
onsemi |
|
Packaging |
Tube |
|
Part Status |
Active |
|
IGBT Type |
Field Stop |
|
Collector-Emitter Breakdown Voltage (Max) |
600 V |
|
Collector Current (Ic) (Max) |
120 A |
|
Collector Pulsed Current (Icm) |
180 A |
|
Maximum Vce(on) @ Vge, Ic |
2.5 V @ 15V, 60A |
|
Maximum Power Dissipation |
600 W |
|
Switching Energy |
1.26 mJ (on), 450 µJ (off) |
|
Input Type |
Standard |
|
Gate Charge |
189 nC |
|
Turn-on / Turn-off Delay Time @ 25°C |
18 ns / 104 ns |
|
Test Condition |
400V, 60A, 3Ω, 15V |
|
Reverse Recovery Time (trr) |
39 ns |
|
Operating Temperature Range |
-55°C ~ 175°C (TJ) |
|
Mounting Type |
Through Hole |
|
Package / Case |
TO-247-3 |
|
Supplier Device Package |
TO-247-3 |
|
Base Product Number |
FGH60 |
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FAQ
Q: What is the FGH60N60SMD's maximum collector-emitter breakdown voltage?
Q: What is the FGH60N60SMD's maximum collector current capacity?
Q: What is the FGH60N60SMD's usual application?
Q: What is the FGH60N60SMD gate charge?
Q: What are the FGH60N60SMD's turn-on and turn-off delay timings at 25°C?
Q: Is it possible to use the FGH60N60SMD in parallel to achieve greater current applications?
Q: What factors should a gate drive take into account to ensure optimal performance?
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