IGBT 1200V HGTD1N120BNS9A
The HGTD1N120BNS9A is a single IGBT manufactured by onsemi. It has a maximum power dissipation of 60 W and a maximum collector-emitter breakdown voltage of 1200 V. The device ensures effective switching performance with a turn-on delay time of 15 ns and a turn-off delay time of 67 ns at 25°C. It comes in a TO-252AA supplier device package and is appropriate for high voltage and quick switching applications.
Description
Description
- HGTD1N120BNS9A is a high-performance IGBT designed specifically for efficient high-voltage switching applications. It combines low conduction loss like bipolar transistors with the high input impedance of MOSFETs. It is the best option for power supplies, drive circuits for solenoids, relays, and contactors, and control of both AC and DC motors. Additionally, in applications where the least degree of conduction loss is needed, it performs well at medium frequencies.

Feature
- The HGTD1N120BNS9A is a Non-Punch Through (NPT) IGBT designed for high-voltage switching applications. Here are the key features:
- 1. High Voltage Capability

- It can handle a collector-emitter voltage (BVCES) of up to 1200 V, making it suitable for applications that require high-voltage switching.
- 2. Current Handling
- It has a continuous collector current of 5.3 A at 25°C and 2.7 A at 110°C. The pulsed collector current (ICM) can go up to 6 A.
- 3. Low Conduction Loss
- This IGBT is designed to have low on-state conduction loss, which improves efficiency and reduces heat generation during operation.
- 4. Short Circuit Rating
- This device has a short circuit withstand time of 8 μs at VGE = 15V and 13 μs at VGE = 13V, ensuring it can handle short circuits without damage for a limited period.
- 5. Temperature Performance
- The maximum junction temperature (Tvjmax) is 150°C, and it operates efficiently across a wide temperature range from -55°C to 150°C.
Product parameter information
| Type | Specification |
|
Category |
Single IGBTs |
|
Manufacturer |
onsemi |
|
IGBT Type |
NPT |
|
Collector-Emitter Breakdown Voltage (Max) |
1200 V |
|
Collector Current (Ic) (Max) |
5.3 A |
|
Collector Pulsed Current (Icm) |
6 A |
|
Maximum Vce(on) @ Vge, Ic |
2.9 V @ 15V, 1A |
|
Maximum Power Dissipation |
60 W |
|
Switching Energy |
70 µJ (on), 90 µJ (off) |
|
Input Type |
Standard |
|
Gate Charge |
14 nC |
|
Turn-on / Turn-off Delay Time @ 25°C |
15 ns / 67 ns |
|
Test Condition |
960V, 1A, 82Ω, 15V |
|
Operating Temperature Range |
-55°C ~ 150°C (TJ) |
|
Mounting Type |
Surface Mount |
|
Package / Case |
TO-252-3, DPAK (2 Leads + Tab), SC-63 |
|
Supplier Device Package |
TO-252AA |
|
Base Product Number |
HGTD1N120 |
Shipping
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About us
-
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FAQ
Q: What is the HGTD1N120BNS9A's maximum voltage rating?
Q: What is the HGTD1N120BNS9A's maximum continuous collector current (IC)?
Q: Which applications does the HGTD1N120BNS9A typically find itself in?
Q: What is the HGTD1N120BNS9A's maximum power dissipation?
Q: Is there a short circuit protection feature for the HGTD1N120BNS9A?
Q: What is the HGTD1N120BNS9A's working temperature range?
Q: Is paralleling the HGTD1N120BNS9A easy?
Q: What shipping options are available?
Q: How does the lead time of a product vary?
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