IKW40N120T2

• IKW40N120T2 is a high-performance single IGBT transistor manufactured by Infineon Technologies and belongs to TrenchStop ® Series. This gadget is made especially for applications requiring strict power regulation. It has a maximum collector emitter breakdown voltage of 1200 V and a maximum collector current of 75 A, among many other benefits and performance. Its low Vce (on) of 2.2 V at 15V and 40A further guarantees effective functioning in high-pressure situations. Furthermore, the transistor, which has a maximum power consumption of 480W, is housed in a robust TO-247-3 package that is appropriate for through-hole installation and offers superior thermal control.

•  Key features and performance:

• IKW40N120T2 has multiple advanced features that can enhance its performance and reliability. It uses TRENCHSETOP TM Technology, which is in its second generation. This offers great strength, temperature stability, and a very compact parameter distribution. Simultaneously, this property is very appropriate for applications that demand consistent and great endurance. Its positive temperature coefficient, Vce (sat), facilitates parallel connections and guarantees steady performance in high-power applications. With a conduction time of 60 ns and a turn-off time of 600 ns, it features a low gate charge of 192 nC and quick switching capability. Its efficiency is further enhanced by this, making it appropriate for high-speed switching applications.

•  Environmental and compliance standards:

• This product complies with RoHS regulations and has lead-free electroplating. Its adherence to environmental regulations guarantees that it is devoid of dangerous materials, making it a sustainable and safe option for a range of uses. The gadget also satisfies JEDEC standards, guaranteeing its appropriateness for the automotive industry and other rigorous sectors where dependability and quality are essential.

•  Detailed specifications:

• This device is ideal for a variety of situations and functions efficiently in a wide temperature range of -40 °C to 175 °C. Its 258ns reverse recovery time contributes to its excellent efficiency and minimal switching loss. With values of 192nC and 5.25mJ, respectively, its gate charge and switching energy have been tuned for high-performance applications. It is a dependable part of power control systems due to its collector pulse current capability of 160 A, which guarantees excellent performance under dynamic load situations.

Application

 

• The IKW40N120T2 is intended for use in a variety of applications, such as uninterruptible power supply and frequency converters. It is simple to employ in industrial projects where dependable power regulation is essential due to its low EMI and high stiffness. It is an extremely gentle and quick-recovery high-emission diode that is managed by an anti-parallel emitter, lowering switching losses and raising total efficiency. This enhances its functionality even further in these applications. Furthermore, the device satisfies the exacting quality and dependability criteria of the intended application by adhering to JEDEC standards.

 

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FAQ

Q: What is the IKW40N120T2's maximum collector-emitter breakdown voltage?

A: Its maximum breakdown voltage between the collector and emitter is 1200 V. It is appropriate for applications needing significant voltage handling because of its high voltage capacity.

Q: What is this IGBT's maximum continuous collector current?

A: This product has a maximum continuous collector current (Ic) of 75 A. Because of this, the device can efficiently manage high current loads, which makes it perfect for applications requiring a lot of power.

Q: What are the main characteristics of the IGBT's TRENCHSTOPTM 2 technology?

A: Many benefits are provided by the TRENCHSTOPTM 2 technology in this product, such as highly tight parameter distribution, great ruggedness, and temperature stable behavior. Durability and dependable performance are guaranteed in high-stress situations by these features.

Q: What is the IKW40N120T2's maximum power dissipation?

A: This type can dissipate up to 480 W of power at its utmost. The IGBT can manage large power loads without overheating thanks to its high power dissipation capacity, which is essential for sustaining performance in demanding applications.

Q: Which applications are common for the IKW40N120T2?

A: Frequency converters, uninterruptible power supply, and converters with high switching frequencies are typical uses for this kind. Its strong performance and great efficiency make it ideal for industrial power control applications such as welding converters.

Q: What is the switching speed performance of the IKW40N120T2?

A: It can flip on quickly, taking 60 nanoseconds to turn on and 600 nanoseconds to turn off. It is appropriate for high-speed switching applications due to its quick switching capability, which lowers switching losses and boosts overall efficiency.

Q: Does XRS have enough IKW40N120T2 in stock?

A: Yes, XRS has a large stock of these product in order to guarantee that we can quickly fulfill our clients' requests. Our well-stocked inventory enables prompt order fulfillment and delivery, giving clients the guarantee that their products will be available when they need them.

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