NSV60600MZ4T1G
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NSV60600MZ4T1G

NSV60600MZ4T1G

The NSV60600MZ4T1G is a PNP bipolar junction transistor (BJT) manufactured by onsemi, categorized under discrete semiconductor products. It can withstand a maximum collector-emitter voltage (Vce) of 60 V and a maximum collector current (Ic) of 6 A. For high-efficiency switching applications, the transistor's low Vce saturation voltage of 350 mV at 600 mA base current and 6 A collector current makes it appropriate.

Description

Overview

 

  • Overview_NSV60600MZ4T1GNSV60600MZ4T1G is a low VCE (sat) transistor from ON Semiconductor manufacturer, belonging to the e2Edge series. Its high current gain and ultra-low saturation voltage are designed for surface placement. Because of this, it is ideal for high-speed, low-voltage switching applications where energy economy is critical.
  •  
  • DC-DC converters and power management in portable electronics such MP3 players, PDAs, PCs, printers, and digital cameras are common applications. It is also utilized in automotive applications, including as instrument panels and airbag deployment, and low-voltage motor control of disk and tape drives.
  •  
  • The product's linear gain (Beta) makes it a perfect fit for analog amplifiers, and its high current gain enables direct driving from the PMU controlled output. As a result of its AEC-Q101 certification, this component is an automobile grade transistor. It is excellent for use in professional applications such as automotive ones. It also complies with RoHS regulations, is lead-free, halogen-free/BFR, and fulfills stringent safety and environmental requirements.

 

Product parameter information
Type Specification

Category

Discrete Semiconductor Products

Type

Transistors

Subtype

Bipolar (BJT), Single Bipolar Transistors

Manufacturer

onsemi

Transistor Type

PNP

Maximum Collector Current (Ic)

6 A

Maximum Collector-Emitter Voltage (Vce)

60 V

Maximum Vce Saturation @ Ib, Ic

350mV @ 600mA, 6A

Maximum Collector Cutoff Current (ICBO)

100nA

Minimum DC Current Gain (hFE) @ Ic, Vce

120 @ 1A, 2V

Maximum Power Dissipation

800 mW

Transition Frequency (fT)

100 MHz

Operating Temperature Range

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-261-4, TO-261AA

Supplier Device Package

SOT-223 (TO-261)

Base Product Number

NSV60600

Dimensions and Packaging

 

  • This product is packaged in a TO-261-4, TO-261AA container, also referred to as SOT-223 (TO-261) and is intended for surface mounting. It has four pins with gull wing terminal form and dual terminal position. It has a silicon transistor element. With height of 1.65mm, length of 6.7mm, and width of 3.7mm, this model's dimensions are marginally different from those of other transistors, offering a small and effective packaging for a range of applications.
  • Dimensions And Packaging_NSV60600MZ4T1G
    Dimensions And Packaging_NSV60600MZ4T1G_

     

 

Product Characteristics
  •  High Collector Current Capability:
  • It can manage moderate to high current loads in electronic circuits with a maximum collector current (Ic) of 6 A.
  •  Medium Voltage Handling:
  • These transistors are appropriate for applications where voltage management is crucial since they can withstand a maximum collector-emitter voltage (Vce) of 60 V.
  •  Low Saturation Voltage:
  • It operates efficiently even under high load situations thanks to its low Vce saturation, which reaches a maximum of 350 mV at 600 mA and 6 A.
  •  Enhanced DC Current Gain:
  • With a minimum DC current gain (hFE) of 120 at 1A and 2V, these transistors are ideal for switching and signal amplification applications because of their high gain and amplification capabilities.
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FAQ

Q: What is the NSV60600MZ4T1G transistor's maximum collector current (Ic) rating?

A: It can manage moderate to high current loads in a variety of circuit applications because to its maximum collector current (Ic) rating of 6 A.

Q: What is the NSV60600MZ4T1G transistor's normal Vce saturation voltage?

A: Its low Vce saturation voltage, usually about 350 mV at 600 mA and 6 A collector current (Ic), guarantees effective functioning even in situations with heavy loads.

Q: What is the NSV60600MZ4T1G transistor's operating temperature range?

A: It functions in a temperature range of -55°C to 150°C (TJ), offering adaptability and dependability in a range of environmental circumstances.

Q: How can I place an order?

A: You can place an order through our sales representative, or contact us via email.

Q: Does XRS have sufficient stock of NSV60600MZ4T1G products?

A: Yes, XRS maintains an extensive inventory of these circuits, ensuring ample availability to meet our customers' demands promptly. Our well-stocked inventory allows for quick order fulfillment and timely delivery, providing customers with the assurance of product availability when needed.

Q: In what ways might a product's lead time differ?

A: A product's lead time frequently fluctuates depending on the goal price and acceptable delivery period set by the customer. To accommodate personal preferences, a balance between time and cost is maintained.

Q: In what circumstances may I ask for a product replacement or refund?

A: If there is a quantity shortage, the incorrect item is delivered, or there are obvious external flaws (such breaking and corrosion), you can ask for a replacement or return of the products, and we will take care of these problems.

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