DTC114EKAT146
The DTC114EKAT146, manufactured by Rohm Semiconductor, is a surface-mount transistor with a maximum collector-emitter breakdown voltage of 50 V, making it suitable for low-power applications. It ensures effective power management with a maximum collector cutoff current of 500nA and a base resistor (R1) of 10 kOhms. It has high-speed signal switching capabilities with a transition frequency of 250 MHz, making it perfect for a variety of electrical circuits.
Description
Product parameter information
| Type | Specification |
|
Category |
Discrete Semiconductor Products |
|
Manufacturer |
Rohm Semiconductor |
|
Transistor Type |
NPN - Pre-Biased |
|
Current - Collector (Ic) (Max) |
50 mA |
|
Voltage - Collector Emitter Breakdown (Max) |
50 V |
|
Resistor - Base (R1) |
10 kOhms |
|
Resistor - Emitter Base (R2) |
10 kOhms |
|
DC Current Gain (hFE) (Min) @ Ic, Vce |
30 @ 5mA, 5V |
|
Vce Saturation (Max) @ Ib, Ic |
300mV @ 500µA, 10mA |
|
Current - Collector Cutoff (Max) |
500nA |
|
Frequency - Transition |
250 MHz |
|
Power - Max |
200 mW |
|
Mounting Type |
Surface Mount |
|
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
|
Supplier Device Package |
SMT3 |
|
Base Product Number |
DTC114 |
Key features
- Simplified operation:

- All that needs to be set up for DTC114EKAT146 to function is the on/off conditions thanks to an integrated bias resistor. This simplicity makes circuit design chores easier to use and less complex.
- Performance parameters:
- The transistor has a collector cutoff current of up to 500nA and a DC current gain (hFE) of at least 30 at 5mA and 5V. Furthermore, when operating within a maximum power range of 200mW, its maximum collector current (Ic) of 50mA, collector emitter breakdown voltage of 50V, and conversion frequency of 250MHz guarantee dependable performance in a variety of applications.
- Low voltage of saturation:
- The highest Vce saturation of the transistor is 300 mV at Ib=500 µ a and Ic=10 mA, which can reduce power loss and boost switching application efficiency.
- Minimal collector cutoff current:
- This transistor has a maximum collector cutoff voltage of 500nA. As a result, low power consumption in the standby or off state can also be maintained. This enhances the circuit's overall energy efficiency.
- Elevated frequency conversion:
- This model's 250 MHz conversion frequency suggests that it can function well in high-frequency devices like oscillators and amplifiers. In these kinds of applications, quick signal processing is critical.
Package information
- This model is available in the TO-236-3, SC-59, SOT-23-3 surface-mount package format. The supplier device package has the designation SMT3 and has a Gull Wing terminal form with a dual terminal position. Copper, Silver, and Tin make up the terminal finish (Sn/Ag/Cu). In terms of dimensions, it has a height of 1.3mm, a length of 2.9mm, and a width of 1.6mm.


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FAQ
Q: What is the DTC114EKAT146's maximum collector current (Ic)?
Q: Does the circuit layout of the DTC114EKAT146 require external input resistors?
Q: Is it possible to configure an inverter circuit using the DTC114EKAT146?
Q: Which are the main benefits of utilizing this product when designing circuits?
Q: Is this product appropriate for uses where complementary transistor topologies are needed?
Q: What is this product's maximum power dissipation?
Q: Does this product have a high transition frequency?
Q: At maximum collector current, what voltage is there at this product's collector-emitter junction?
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