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MMUN2111LT1G
MMUN2111LT1G
MMUN2111LT1G

MMUN2111LT1G

The MMUN2111LT1G is a single, pre-biased bipolar transistor manufactured by onsemi. It operates with a maximum output current of 100mA and an operating supply voltage of 50V. The transistor is designed for discrete semiconductor applications and can withstand a peak reflow temperature of 260°C for up to 40 seconds. This component is ideal for switching and amplification purposes in various electronic circuits.

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Description

Product parameter information

Type	Specification
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Max Power Dissipation	246mW
Terminal Position	Dual
Peak Reflow Temperature (°C)	260
Time @ Peak Reflow Temperature (Max)	40s
Base Part Number	MMUN21**L
Max Output Current	100mA
Operating Supply Voltage	50V
Number of Elements	1
Polarity	PNP
Power Dissipation	246mW
Transistor Application	Switching
Halogen Free	Yes
Transistor Type	PNP - Pre-Biased
Collector Emitter Voltage (VCEO)	50V
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	35 @ 5mA 10V
Current - Collector Cutoff (Max)	500nA
Vce Saturation (Max) @ Ib, Ic	250mV @ 300μA, 10mA
Collector Emitter Saturation Voltage	250mV
Max Breakdown Voltage	50V
Resistor - Base (R1)	10 kΩ
Continuous Collector Current	100mA

Unique Features of Product

Integrated bias network

Onsemi's MMUN2111LT1G transistor boasts a distinctive design. In particular, it has a base emitter resistor and a series base resistor that make up an integrated single-chip bias network. By doing away with the requirement for external bias components, this integration streamlines the circuit design process and lowers the overall number of components.

Room and economical effectiveness

The transistor's bias network is added, greatly lowering the amount of board space and system cost needed. In real-world applications, this capability is tremendously helpful, especially in extremely valued small electrical equipment. Its surface mount design and compact package size (TO-236-3, SC-59, SOT-23-3) further improve its suitability for high-density applications.

Robust performance of automotive applications

This kind of device is specifically made to function dependably in high-stress situations. It possesses PPAP functionality and AEC-Q101 accreditation. The PNP pre bias transistor ensures strong switching performance with a maximum collector current of 100mA, a collector emitter rated voltage of 50V, and a power consumption of 246mW. Because it is halogen-free, it is also eco-friendly and satisfies particular on-site criteria and stringent control requirements for automotive and other applications.

Product size and packaging

This transistor adopts compact TO-236-3, SC-59, SOT-23-3 packaging, which is very suitable for high-density applications. This surface mounted device has a seagull wing shaped dual terminal position, ensuring reliable and stable placement on the printed circuit board.
Specific size information:
Height: 940μm

Length: 2.9mm

Width: 1.3mm
MMUN2111LT1G has 3 pins,and is packaged in magnetic tape and reel (TR) format, which is very suitable for automated assembly processes, improving manufacturing efficiency and shortening processing time.

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FAQ

Q: Which is the main use for the MMUN2111LT1G?

A: The main purpose of this device is switching applications. Because it is a pre-biased PNP transistor, circuit construction is made simpler and less external components are required due to the resistors that are already incorporated into the transistor.

Q: What is this model's maximum collector-emitter voltage?

A: For this model, the maximum collector-emitter voltage (VCEO) is 50V. The maximum voltage that the transistor can tolerate in the off state between the collector and emitter terminals is indicated by this value.

Q: Why would one want to use a pre-biased transistor such as the MMUN2111LT1G?

A: The circuit design is made simpler when a pre-biased transistor is used instead of external biasing resistors. This integration decreases the total cost of the system by reducing the number of components and saving board space.

Q: Is the MMUN2111LT1G appropriate for use in automotive settings?

A: Yes, this model works well in applications requiring strict quality standards, such as the automotive industry. It satisfies the particular change control and quality requirements of automotive applications because it has the S and NSV prefix, indicating that it is AEC-Q101 qualified and PPAP capable.

Q: What rating does the MMUN2111LT1G currently have?

A: For this model, the maximum collector current (IC) is 100mA. This is the highest current that the transistor can withstand passing via the collector terminal.

Q: Does XRS have enough of these products in stock?

A: Yes, our company keeps a large stock of MMUN2111LT1G, guaranteeing that we can quickly fulfill our clients' requests. Our well-stocked inventory enables prompt order fulfillment and delivery, giving clients the guarantee that their products will be available when they need them.

Q: Which delivery choices are available?

A: To accommodate varying customer needs, we offer a range of shipping choices, including express, air freight, and sea freight.

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