SMMUN2211LT1G
The SMMUN2211LT1G is an NPN pre-biased bipolar transistor manufactured by onsemi, designed for automotive applications. It belongs to the class of discrete semiconductor products, namely single bipolar transistors that have been pre-biased. Because it is an NPN transistor, it can be used in automobile circuits for switching and amplification.
Description
Overview
SMMUN2211LT1G is an onsemi NPN pre biased bipolar transistor designed specifically for various electronic applications. This device operates with dependability thanks to its maximum collector current of 100 milliamperes and collector emitter breakdown voltage of 50 volts. Circuit design is made simpler by the combination of base and emitter resistors. Stable amplification is ensured by its minimal collector emitter saturation voltage, which lowers power consumption, and its DC current gain of at least 35. In addition, it is an automotive grade transistor that conforms to the AEC-Q101 vehicle specification.
Features
- Circuit design that is simplified:
- By eliminating the need for external bias networks and streamlining circuit design, this device has integrated base and emitter resistors.
- Solution to save space:
- This kind of transistor minimizes the amount of space needed on the circuit board and is appropriate for small-sized electronic applications because it incorporates resistors into a single device.
- Reducing the number of components in an effective manner:
- It lowers the total number of components in electrical systems and makes assembly simpler by doing away with external resistors.
- Automotive grade quality:
- The transistor design is reliable and durable in challenging situations, meeting the requirements of the AEC-Q101 automotive standard. It is appropriate for use in automotive applications.
- Lead-free and halogen-free:
- This product complies with RoHS requirements and is constructed from ecologically safe, lead- and halogen-free components.
- Multiple uses:
- This transistor's automotive grade certifications make it ideal for use in cars and other electronic devices that need to be highly reliable and performant.
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Control Method of this product
The voltage applied to the base of the bipolar crystal transistor SMMUN2211LT1G in relation to its emitter controls the transistor. More current can flow from the collector to the emitter when a little positive voltage (about 0.7V) is provided to the base. We refer to this as forward activation mode. The bigger collector current is managed by the base current. There is no discernible current flow and the transistor is in cutoff mode if the base emitter voltage is less than 0.7V. Depending on the applied signal and the circuit layout, this control technique enables the transistor to function as a switch or amplifier.
FAQ
Q: What is this product's maximum collector current (Ic)?
Q: Could you elaborate on this model's voltage rating for collector-emitter breakdown (VCEO)?
Q: Is there an incorporated resistance on this model?
Q: Is this model appropriate for use in automotive settings?
Q: What kind of box is this model packaged in?
Q: Could you tell me this product's maximum power dissipation?
Q: Does this product meet RoHS requirements?
Q: How much is this model's minimal DC current gain (hFE) at 5 mA and 10V?
Q: How does the lead time of a product vary?
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