MMBFJ177LT1G
The MMBFJ177LT1G is a JFET transistor manufactured by onsemi, categorized under discrete semiconductor products. It has a maximum input capacitance of 11 pF at 10 V and a breakdown voltage of 30 V. 300 Ohms is the on-state resistance. This part, which belongs to the MMBFJ177 family, is made to operate well in a range of electronic applications.
Description
Feature
-
Electrical properties:
- Onsemi produces the P-channel JFET transistor MMBFJ177LT1G. Its specs include a 15V Vds, a 1.5mA drain current, and a 30V breakdown voltage. Its maximum input capacitance is 11pF at Vds 10V and Vgs 0V, and its cut-off voltage is 800mV at Id 10nA.
- Reliability and performance:
- It has a maximum power consumption of 225mW and a conduction resistance of 300 ohms. It functions well in a broad temperature range of -55 °C to 150 °C (TJ) and is appropriate for a number of applications requiring dependable performance in a variety of thermal environments.
- Physical and installation details:
- This product comes in TO-236-3, SC-59, and SOT-23-3 packaging and is intended for surface mounting. It is frequently used for switching and signal amplification in electrical circuits due to its small form factor, which makes it ideal for applications with limited space.
Product parameter information:
| Type | Specification |
|
Category |
Discrete Semiconductor Products |
|
Type |
Transistors-JFETs |
|
Manufacturer |
onsemi |
|
FET Type |
P-Channel |
|
Breakdown Voltage (V(BR)GSS) |
30 V |
|
Drain Current (Idss) @ Vds (Vgs=0) |
1.5 mA @ 15 V |
|
Cutoff Voltage (VGS off) @ Id |
800 mV @ 10 nA |
|
Input Capacitance (Ciss) (Max) @ Vds |
11pF @ 10V (VGS) |
|
On-State Resistance (RDS(On)) |
300 Ohms |
|
Maximum Power Dissipation |
225 mW |
|
Temperature Range |
-55°C to 150°C (TJ) |
|
Mounting Style |
Surface Mount |
|
Package / Enclosure |
TO-236-3, SC-59, SOT-23-3 |
|
Supplier Package |
SOT-23-3 (TO-236) |
|
Base Part Number |
MMBFJ177 |
Operating Characteristics of product
MMBFJ177LT1G is a P-channel JFET. The channel resistance is extremely low when there is no voltage supplied to the gate (Vgs=0). The transistor's internal current (Ids) can be regulated by adjusting the gate source voltage (Vgs) and drain source voltage (Vds). The channel's resistance can be altered by adjusting Vgs, which aids in amplifying the input signal. The transistor functions like a resistor at low Vds, and Ids rises as Vds rises. Ids reaches its maximum level and stops rising when Vds climbs when the channel is pinched off when Vds rises to a certain point.
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FAQ
Q: What is the MMBFJ177LT1G's breakdown voltage, and why is it significant?
Q: Could you elaborate on the 1.5 mA drain current (Idss) specified at 15 Vds?
Q: What is the MMBFJ177LT1G's on-state resistance?
Q: What is the MMBFJ177LT1G's maximum power dissipation?
Q: What is the operating temperature range of the MMBFJ177LT1G?
Q: What kind of package does this model come in?
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