MJD122T4G
The MJD122T4G is a single Darlington transistor manufactured by onsemi, categorized under darlington transistors.It features a maximum collector cut-off current of 10 µA and an emitter-base voltage (VEBO) of 5 V. It is appropriate for high-power applications because it can dissipate up to 20 W of power.
Description
Features
- 1. Monolithic Construction and High Current Gain

- The MJD122T4G transistor, made by onsemi, has some great features. It uses monolithic construction with built-in base-emitter shunt resistors, making it very reliable and strong. It also has a high DC current gain, with a typical hFE of 2500 at an IC of 4.0 Adc. This means it is very good at amplifying signals.
- 2. Safety and Quality Standards
- This transistor meets strict safety and quality standards. The epoxy used in it meets UL 94 V-0 at 0.125 inches, so it is flame-retardant. It is perfect for automotive and other special applications because it is AEC-Q101 qualified and PPAP capable. The MJD122T4G also has excellent ESD ratings, withstanding over 8000 V in the Human Body Model and over 400 V in the Machine Model, which protects it from static discharge damage.
- 3. Key Specifications
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Collector-Emitter Voltage (VCEO) Max
100 V
Emitter-Base Voltage (VEBO)
5 V
Collector-Base Voltage (VCBO)
100 V
Maximum DC Collector Current
8 A
Maximum Collector Cut-off Current
10 µA
Operating Temperature Range
-65°C to +150°C Continuous Collector Current
8 A
DC Collector/Base Gain (hfe) Min
100, 1000
Package information
- The MJD122T4G transistor adopts a TO-252-3 (DPAK) surface mount packaging design, which is very suitable for SMD/SMT applications. With dimensions of 2.38 millimeters for height, 6.73 millimeters for length, and 6.22 millimeters for width, this little package strikes a balance between performance and size. Weighing only 0.017637 ounces, each unit has a lightweight design that is useful for applications requiring low-weight components. Furthermore, this product is typically packaged in factory sets of 2500 pieces, which simplifies large-scale manufacturing and assembly procedures.
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FAQ
Q: What is the package style of the MJD122T4G?
Q: What are the key electrical specifications of this model?
Q: What is the typical DC current gain of the MJD122T4G?
Q: What are the MJD122T4G's operational temperature limits?
Q: Why is the MJD122T4G appropriate for use in automotive settings?
Q: What are some typical uses for the transistor MJD122T4G?
Q: Where can I access comprehensive technical details and support for this model?
Q: What types of electronic components does XRS offer?
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