ZXGD3009
In the dynamic realm of power electronics, the ZXGD3009 emerges as a high-speed non-inverting single gate driver meticulously crafted for optimal MOSFET switching.
Description
ZXGD3009 High Speed Gate Driver IC Details
In the dynamic realm of power electronics, the ZXGD3009 emerges as a high-speed non-inverting single gate driver meticulously crafted for optimal MOSFET switching. This article delves into the ZXGD3009's multifaceted features, applications, and mechanical nuances, revealing its excellence in delivering precision and efficiency.
Efficient Gate Drive: ZXGD3009 exhibits the ability to transfer up to 1A peak source/sink current to the gate, ensuring fast and efficient charging and discharging of capacitive loads.
Versatile MOSFET Switching: Gate drivers designed to minimize power loss and distortion in high-current switching applications facilitate fast and controlled MOSFET switching, improving overall system performance.
Customizable switching behavior: Individually tune MOSFET turn-on and turn-off characteristics to reduce electromagnetic interference (EMI) and mutual conduction issues.
Low quiescent current consumption: With near-zero quiescent current consumption, ZXGD3009 optimizes power consumption and contributes to energy-efficient designs.
Application:
Unleashed Versatility: The ZXGD3009 demonstrates its application capabilities in a variety of areas, including power supplies, DC-DC converters, and amplifier output stages. Its fast performance makes it an invaluable asset in scenarios where accuracy and efficiency are required.
Feature details:
High Gain Buffer: The gate driver boasts a high gain buffer, typically delivering 500mA of output from just 10mA of input. This feature emphasizes the drive efficiency of the MOSFET.
Robust Emitter Follower: Emitter follower design ensures robustness against latch-up and shoot-through issues, increasing gate driver reliability.
Wide supply voltage range: With a wide supply voltage range, ZXGD3009 minimizes on-loss and provides flexibility for different power supply scenarios.
Independent Control Outputs: This driver has independent sourcing and sinking outputs, allowing independent control of MOSFET turn-on and turn-off times, providing a tailored approach to switching behavior.
Mechanical specifications:
Compact SOT363 case: Housed in a compact SOT363 case, the ZXGD3009 features molded plastic construction with a "green" molding compound and meets the stringent UL flammability rating of 94V-0.
Moisture Resistance: Compliant with J-STD-020 Level 1, the gate driver is resistant to moisture-related issues.
Brushed Tin Plated Leads: Terminals feature a matte tin plated lead finish to ensure a reliable and consistent electrical connection.
Extremely lightweight construction: Weighing approximately 0.018 grams, the ZXGD3009's lightweight design complements its compact shape, making it ideal for space-sensitive applications.
In conclusion, the ZXGD3009 serves as a beacon of precision and efficiency in the gate driver realm. Its high speed capabilities, customizable features, and compact design make it a valuable asset for engineers looking to optimize their MOSFET switching in a variety of applications. Whether in the power supply, converter, or amplifier stage, the ZXGD3009 delivers new levels of control and performance.
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Appendix-Product details:
Base Part Number: TPS61040
Manufacturer: Texas Instruments
Termination: SMD/SMT
Topology: Step-Up (Boost)
Switching Frequency: 1MHz
Type: DC DC Regulator
Input Voltage: 1.8V (Min) - 6V (Max)
Output Voltage: 1.8V (Min) - 28V (Max)
Applications: Backlight
Subcategory: Switching Regulator/Controllers
Reflow Temperature: 260°C
Current Rating: 28mA
Pin Count: 5
Outputs: 1, Adjustable
Efficiency: 86%
Max Output Current: 90mA
Output Current: 400mA, 357mW
Supply Current: 50μA (Max), Quiescent Current: 28μA
Dimming: PWM
Internal Switch: Yes
High Level Output Current: 90mA
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